The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
May. 10, 2012
Patrick Reilly, Dublin, CA (US);
Shahid Shaikh, Santa Clara, CA (US);
Tersem Summan, San Jose, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Sanjeev Baluja, Campbell, CA (US);
Juan Carlos Rocha-alvarez, San Carlos, CA (US);
Thomas Nowak, Cupertino, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Derek R. Witty, Fremont, CA (US);
Patrick Reilly, Dublin, CA (US);
Shahid Shaikh, Santa Clara, CA (US);
Tersem Summan, San Jose, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Sanjeev Baluja, Campbell, CA (US);
Juan Carlos Rocha-Alvarez, San Carlos, CA (US);
Thomas Nowak, Cupertino, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Derek R. Witty, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200° C. and about 700° C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200° C.