The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Oct. 12, 2006
Ji-yi Yang, Taoyuan, TW;
Chien-hao Chen, Ylian County, TW;
Tze-liang Lee, Hsinchu, TW;
Shih-chang Chen, Hsinchu, TW;
Huan-just Lin, Hsinchu, TW;
Ji-Yi Yang, Taoyuan, TW;
Chien-Hao Chen, Ylian County, TW;
Tze-Liang Lee, Hsinchu, TW;
Shih-Chang Chen, Hsinchu, TW;
Huan-Just Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Bulk silicon is transformed into an SOI-like structure by annealing. Trenches are formed in a bulk substrate to define device sites. The lower portions of the trenches are annealed at low pressure in a hydrogen atmosphere. This transforms the lower trench portions to expanded, spheroidal voids that extend under the device sites. Neighboring voids each reside about half way under an intervening site. A silicon-consuming process forms a liner on the walls of the voids, with the liners on neighboring voids abutting to isolate the intervening device site from the substrate and other device sites.