The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Oct. 22, 2009
Kazunari Maki, Saitama, JP;
Kenichi Yaguchi, Ageo, JP;
Yosuke Nakasato, Osaka, JP;
Satoru Mori, Okegawa, JP;
Kazunari Maki, Saitama, JP;
Kenichi Yaguchi, Ageo, JP;
Yosuke Nakasato, Osaka, JP;
Satoru Mori, Okegawa, JP;
Mitsubishi Materials Corporation, Tokyo, JP;
Ulvac, Inc., Chigasaki-shi, JP;
Abstract
This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.