The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
May. 15, 2012
Adrien Lavoie, Portland, OR (US);
Bhadri Varadarajan, Beaverton, OR (US);
Jon Henri, West Linn, OR (US);
Dennis Hausmann, Lake Oswego, OR (US);
Adrien LaVoie, Portland, OR (US);
Bhadri Varadarajan, Beaverton, OR (US);
Jon Henri, West Linn, OR (US);
Dennis Hausmann, Lake Oswego, OR (US);
Novellus Systems, Inc., Fremont, CA (US);
Abstract
Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.