The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
May. 15, 2012
Hitoshi Kato, Iwate, JP;
Shigehiro Ushikubo, Iwate, JP;
Tatsuya Tamura, Iwate, JP;
Shigenori Ozaki, Yamanashi, JP;
Takeshi Kumagai, Iwate, JP;
Hiroyuki Kikuchi, Iwate, JP;
Hitoshi Kato, Iwate, JP;
Shigehiro Ushikubo, Iwate, JP;
Tatsuya Tamura, Iwate, JP;
Shigenori Ozaki, Yamanashi, JP;
Takeshi Kumagai, Iwate, JP;
Hiroyuki Kikuchi, Iwate, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.