The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Aug. 31, 2012
Lingquan Wang, Los Gatos, CA (US);
Teymur Bakhishev, San Jose, CA (US);
Dalong Zhao, San Jose, AZ (US);
Pushkar Ranade, Los Gatos, CA (US);
Sameer Pradhan, San Jose, CA (US);
Thomas Hoffmann, Los Gatos, CA (US);
Lucian Shifren, San Jose, CA (US);
Lance Scudder, Sunnyvale, CA (US);
Lingquan Wang, Los Gatos, CA (US);
Teymur Bakhishev, San Jose, CA (US);
Dalong Zhao, San Jose, AZ (US);
Pushkar Ranade, Los Gatos, CA (US);
Sameer Pradhan, San Jose, CA (US);
Thomas Hoffmann, Los Gatos, CA (US);
Lucian Shifren, San Jose, CA (US);
Lance Scudder, Sunnyvale, CA (US);
SuVolta, Inc., Los Gatos, CA (US);
Abstract
A semiconductor structure is formed with a NFET device and a PFET device. The NFET device is formed by masking the PFET device regions of a substrate, forming a screen layer through epitaxial growth and in-situ doping, and forming an undoped channel layer on the screen layer through epitaxial growth. The PFET device is similarly formed by masking the NFET regions of a substrate, forming a screen layer through epitaxial growth and in-situ doping, and forming an undoped channel layer on the screen layer through epitaxial growth. An isolation region is formed between the NFET and the PFET device areas to remove any facets occurring during the separate epitaxial growth phases. By forming the screen layer through in-situ doped epitaxial growth, a reduction in junction leakage is achieved versus forming the screen layer using ion, implantation.