The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Jul. 21, 2011
Qing Xu, Fremont, CA (US);
Camelia Rusu, Pleasanton, CA (US);
Jaroslaw W. Winniczek, Daly City, CA (US);
Frank Y. Lin, Fremont, CA (US);
Alan J. Miller, Moraga, CA (US);
Qing Xu, Fremont, CA (US);
Camelia Rusu, Pleasanton, CA (US);
Jaroslaw W. Winniczek, Daly City, CA (US);
Frank Y. Lin, Fremont, CA (US);
Alan J. Miller, Moraga, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.