The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2013

Filed:

Jul. 23, 2010
Applicants:

Chung-shi Liu, Shin-Chu, TW;

Cheng-chung Lin, Taipei, TW;

Ming-che Ho, Tainan, TW;

Kuo Cheng Lin, Hsin-Chu, TW;

Meng-wei Chou, Zhubei, TW;

Inventors:

Chung-Shi Liu, Shin-Chu, TW;

Cheng-Chung Lin, Taipei, TW;

Ming-Che Ho, Tainan, TW;

Kuo Cheng Lin, Hsin-Chu, TW;

Meng-Wei Chou, Zhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/445 (2006.01); H01L 21/4757 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming an integrated circuit structure includes forming a copper-containing seed layer on a wafer, and performing a descum step on an exposed surface of the copper-containing seed layer. The descum step is performed using a process gas including fluorine and oxygen. A reduction/purge step is then performed on the exposed surface of the copper-containing seed layer using a nitrogen-containing gas. A copper-containing layer is plated on the copper-containing seed layer.


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