The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Aug. 20, 2008
Jian Wang, Shanghai, CN;
Zhaowei Jia, Shanghai, CN;
Junping Wu, Shanghai, CN;
Liangzhi Xie, Shanghai, CN;
Hui Wang, Shanghai, CN;
Jian Wang, Shanghai, CN;
Zhaowei Jia, Shanghai, CN;
Junping Wu, Shanghai, CN;
Liangzhi Xie, Shanghai, CN;
Hui Wang, Shanghai, CN;
ACM Research (Shanghai) Inc., , CN;
Abstract
This invention relates to a method and apparatus by integrating semiconductor manufacturing processes of stress free electrochemical copper polishing (SFP), removal of the Tantalum oxide or Titanium oxide formed during SFP process and XeFgas phase etching barrier layer Ta/TaN or Ti/TiN process. Firstly, at least portion of plated copper film is polished by SFP. Secondly the barrier metal oxide film formed during SFP process is etched away by etchant. Finally, the barrier layer Ta/TaN or Ta/TiN is removed with XeFgas phase etching. The apparatus accordingly consists of three sub systems: stress free copper electropolishing system, barrier layer oxide film removal system and barrier layer Ta/TaN or Ti/TiN gas phase etching system.