The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Oct. 24, 2011
Hsueh-liang Chou, Jhubei, TW;
Chen-bau Wu, Zhubei, TW;
Weng-chu Chu, Qionglin Shiang, TW;
Tsung-yi Huang, Hsin-Chu, TW;
Fu-jier Fan, Hsin-Chu, TW;
Hsueh-Liang Chou, Jhubei, TW;
Chen-Bau Wu, Zhubei, TW;
Weng-Chu Chu, Qionglin Shiang, TW;
Tsung-Yi Huang, Hsin-Chu, TW;
Fu-Jier Fan, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a substrate, a first well region of a first conductivity type overlying the substrate, a second well region of a second conductivity type opposite the first conductivity type overlying the substrate, a cushion region between and adjoining the first and the second well regions, an insulation region in a portion of the first well region and extending from a top surface of the first well region into the first well region, a gate dielectric extending from over the first well region to over the second well region, wherein the gate dielectric has a portion over the insulation region, and a gate electrode on the gate dielectric.