The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2013

Filed:

Oct. 15, 2010
Applicants:

Chih-chang Cheng, Hsinchu, TW;

Ruey-hsin Liu, Hsin-Chu, TW;

Chih-wen (Albert) Yao, Hsinchu, TW;

Ru-yi Su, Kouhu Township, Yunlin County, TW;

Fu-chih Yang, Fengshan, TW;

Chun Lin Tsai, Hsin-Chu, TW;

Inventors:

Chih-Chang Cheng, Hsinchu, TW;

Ruey-Hsin Liu, Hsin-Chu, TW;

Chih-Wen (Albert) Yao, Hsinchu, TW;

Ru-Yi Su, Kouhu Township, Yunlin County, TW;

Fu-Chih Yang, Fengshan, TW;

Chun Lin Tsai, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a semiconductor device. The semiconductor device includes a resistor and a voltage protection device. The resistor has a spiral shape. The resistor has a first portion and a second portion. The voltage protection device includes a first doped region that is electrically coupled to the first portion of the resistor. The voltage protection device includes a second doped region that is electrically coupled to the second portion of the resistor. The first and second doped regions have opposite doping polarities.


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