The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Feb. 07, 2011
Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same
Tsai-yu Huang, Taipei County, TW;
Vishwanath Bhat, Boise, ID (US);
Vassil Antonov, Boise, ID (US);
Chun-i Hsieh, Boise, ID (US);
Chris Carlson, Nampa, ID (US);
Tsai-Yu Huang, Taipei County, TW;
Vishwanath Bhat, Boise, ID (US);
Vassil Antonov, Boise, ID (US);
Chun-I Hsieh, Boise, ID (US);
Chris Carlson, Nampa, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material. Capacitors, semiconductor devices and methods of forming a semiconductor device including the capacitors are also disclosed.