The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Sep. 22, 2011
Chien-wei Wang, Wufong Township, Taichung County, TW;
Ko-bin Kao, Shengang Township, Taichung County, TW;
Wei-liang Lin, Hsin-Chu, TW;
Jui-ching Wu, Hsinchu, TW;
Chia-hsiang Lin, Zhubei, TW;
Ai-jen Jung, Zhushan Township, Nantou County, TW;
Chien-Wei Wang, Wufong Township, Taichung County, TW;
Ko-Bin Kao, Shengang Township, Taichung County, TW;
Wei-Liang Lin, Hsin-Chu, TW;
Jui-Ching Wu, Hsinchu, TW;
Chia-Hsiang Lin, Zhubei, TW;
Ai-Jen Jung, Zhushan Township, Nantou County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Methods for forming a pattern in a lithography process for semiconductor wafer manufacturing are provided. In an example, a method includes forming a photoresist layer over a material layer; performing a first exposure process on the photoresist layer, thereby forming an exposed photoresist layer having soluble portions and unsoluble portions; treating the exposed photoresist layer, wherein the treating includes one of performing a second exposure process on the exposed photoresist layer and forming an adsorbing chemical layer over the exposed photoresist layer; and developing the exposed and treated photoresist layer to remove the soluble portions of the photoresist layer, wherein the unsoluble portions of the photoresist layer form a photoresist pattern that exposes portions of the material layer.