The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Aug. 17, 2009
Tzung-i Su, Yun-Lin County, TW;
Bang-chiang Lan, Taipei, TW;
Chao-an Su, Kaohsiung County, TW;
Hui-min Wu, Hsinchu County, TW;
Ming-i Wang, Taipei County, TW;
Chien-hsin Huang, Taichung, TW;
Tzung-han Tan, Taipei, TW;
Min Chen, Taipei County, TW;
Meng-jia Lin, Changhua County, TW;
Wen-yu Su, Hsinchu, TW;
Tzung-I Su, Yun-Lin County, TW;
Bang-Chiang Lan, Taipei, TW;
Chao-An Su, Kaohsiung County, TW;
Hui-Min Wu, Hsinchu County, TW;
Ming-I Wang, Taipei County, TW;
Chien-Hsin Huang, Taichung, TW;
Tzung-Han Tan, Taipei, TW;
Min Chen, Taipei County, TW;
Meng-Jia Lin, Changhua County, TW;
Wen-Yu Su, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor photodetector structure is provided. The structure includes a substrate, a photodetecting element and a semiconductor layer disposed on the photodetecting element. The substrate includes a first semiconductor material and includes a deep trench. The surface of the deep trench includes a first type dopant. The photodetecting element is disposed in the deep trench. The photodetecting element includes a second semiconductor material. The semiconductor layer includes a second type dopant.