The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Dec. 09, 2011
Richard J. Brown, Los Gatos, CA (US);
Hui Nie, Cupertino, CA (US);
Andrew Edwards, San Jose, CA (US);
Isik Kizilyalli, San Francisco, CA (US);
David Bour, Cupertino, CA (US);
Thomas Prunty, Santa Clara, CA (US);
Linda Romano, Sunnyvale, CA (US);
Madhan Raj, Cupertino, CA (US);
Richard J. Brown, Los Gatos, CA (US);
Hui Nie, Cupertino, CA (US);
Andrew Edwards, San Jose, CA (US);
Isik Kizilyalli, San Francisco, CA (US);
David Bour, Cupertino, CA (US);
Thomas Prunty, Santa Clara, CA (US);
Linda Romano, Sunnyvale, CA (US);
Madhan Raj, Cupertino, CA (US);
Avogy, Inc., San Jose, CA (US);
Abstract
A semiconductor structure includes a III-nitride substrate having a top surface and an opposing bottom surface and a first III-nitride layer of a first conductivity type coupled to the top surface of the III-nitride substrate. The semiconductor structure also includes a second III-nitride layer of a second conductivity type coupled to the first III-nitride layer along a vertical direction and a third III-nitride layer of a third conductivity type coupled to the second III-nitride layer along the vertical direction. The semiconductor structure further includes a first trench extending through a portion of the third III-nitride layer to the first III-nitride layer, a second trench extending through another portion of the third III-nitride layer to the second III-nitride layer, and a first metal layer coupled to the second and the third III-nitride layers.