The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Jan. 12, 2010
Chun Hsiung Tsai, Xinpu Township, TW;
Chien-chang Su, Kaohsiung, TW;
Tsung-hung LI, Hsin-Chu, TW;
Da-wen Lin, Hsin-Chu, TW;
Wen-sheh Huang, Hsin-Chu, TW;
Chun Hsiung Tsai, Xinpu Township, TW;
Chien-Chang Su, Kaohsiung, TW;
Tsung-Hung Li, Hsin-Chu, TW;
Da-Wen Lin, Hsin-Chu, TW;
Wen-Sheh Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming an integrated circuit includes providing a semiconductor wafer; and forming a fin field-effect transistor (FinFET) including implanting the semiconductor wafer using a hot-implantation to form an implanted region in the FinFET. The implanted region comprises a region selected from the group consisting essentially of a lightly doped source and drain region, a pocket region, and a deep source drain region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile