The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2013

Filed:

Jan. 10, 2011
Applicants:

Mukta G. Farooq, Hopewell Junction, NY (US);

Troy L. Graves-abe, Wappingers Falls, NY (US);

Robert Hannon, Wappingers Falls, NY (US);

Emily R. Kinser, Poughkeepsie, NY (US);

William F. Landers, Wappingers Falls, NY (US);

Kevin S. Petrarca, Newburgh, NY (US);

Richard P. Volant, New Fairfield, CT (US);

Kevin R. Winstel, Poughkeepsie, NY (US);

Inventors:

Mukta G. Farooq, Hopewell Junction, NY (US);

Troy L. Graves-Abe, Wappingers Falls, NY (US);

Robert Hannon, Wappingers Falls, NY (US);

Emily R. Kinser, Poughkeepsie, NY (US);

William F. Landers, Wappingers Falls, NY (US);

Kevin S. Petrarca, Newburgh, NY (US);

Richard P. Volant, New Fairfield, CT (US);

Kevin R. Winstel, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed are a structure including alignment marks and a method of forming alignment marks in three dimensional (3D) structures. The method includes forming apertures in a first surface of a first semiconductor substrate; joining the first surface of the first semiconductor substrate to a first surface of a second semiconductor substrate; thinning the first semiconductor on a second surface of the first semiconductor substrate to provide optical contrast between the apertures and the first semiconductor substrate; and aligning a feature on the second surface of the first semiconductor substrate using the apertures as at least one alignment mark.


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