The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Jul. 25, 2011
Cheng-hao Hou, Hsinchu, TW;
Peng-soon Lim, Johor, MY;
Da-yuan Lee, Jhubei, TW;
Xiong-fei Yu, Hsinchu, TW;
Chun-yuan Chou, Taipei, TW;
Fan-yi Hsu, Toufen Town, TW;
Jian-hao Chen, Hsinchu, TW;
Kuang-yuan Hsu, Fongyuan, TW;
Cheng-Hao Hou, Hsinchu, TW;
Peng-Soon Lim, Johor, MY;
Da-Yuan Lee, Jhubei, TW;
Xiong-Fei Yu, Hsinchu, TW;
Chun-Yuan Chou, Taipei, TW;
Fan-Yi Hsu, Toufen Town, TW;
Jian-Hao Chen, Hsinchu, TW;
Kuang-Yuan Hsu, Fongyuan, TW;
Abstract
An integrated circuit fabrication is disclosed, and more particularly a field effect transistor with a low resistance metal gate electrode is disclosed. An exemplary structure for a metal gate electrode of a field effect transistor comprises a lower portion formed of a first metal material, wherein the lower portion has a recess, a bottom portion and sidewall portions, wherein each of the sidewall portions has a first width; and an upper portion formed of a second metal material, wherein the upper portion has a protrusion and a bulk portion, wherein the bulk portion has a second width, wherein the protrusion extends into the recess, wherein a ratio of the second width to the first width is from about 5 to 10.