The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Jul. 27, 2007
Takashi Yamamoto, Amagasaki, JP;
Masahiko Tanaka, Amagasaki, JP;
Yoshiyuki Nozawa, Amagasaki, JP;
Shoichi Murakami, Amagasaki, JP;
Takashi Yamamoto, Amagasaki, JP;
Masahiko Tanaka, Amagasaki, JP;
Yoshiyuki Nozawa, Amagasaki, JP;
Shoichi Murakami, Amagasaki, JP;
SPP Technologies Co., Ltd., Tokyo, JP;
Abstract
The present invention relates to a plasma etching method in which a special area for detecting an end point needs not to be set and an equipment therefor. At an etching step of forming SFgas into plasma to etch an etching ground on a Si film, the step is configured by two steps of: a large-amount supply step of supplying a large amount of SFgas; and a small-amount supply step of supplying a small amount of SFgas. An end-point detecting processormeasures an emission intensity of Si or SiFx in the plasma at the small-amount supply step, and determines that an etching end point is reached when the measured emission intensity becomes equal to or less than a previously set reference value.