The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Nov. 18, 2010
Martin Burkhardt, White Plains, NY (US);
Matthew E. Colburn, Schenectady, NY (US);
Allen H. Gabor, Katonah, NY (US);
Oleg Gluschenkov, Tannersville, NY (US);
Scott D. Halle, Slingerlands, NY (US);
Howard S. Landis, Underhill, VT (US);
Helen Wang, LaGrangeville, NY (US);
Martin Burkhardt, White Plains, NY (US);
Matthew E. Colburn, Schenectady, NY (US);
Allen H. Gabor, Katonah, NY (US);
Oleg Gluschenkov, Tannersville, NY (US);
Scott D. Halle, Slingerlands, NY (US);
Howard S. Landis, Underhill, VT (US);
Helen Wang, LaGrangeville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor device having a substrate, an active region and an inactive region includes: forming a hardmask layer over the substrate; transferring a first pattern into the hardmask layer in the active region of the semiconductor device; forming one or more fills in the inactive region; forming a cut-away hole within, covering, or partially covering, the one or more fills to expose a portion of the hardmask layer, the exposed portion being within the one or more fills; and exposing the hardmask layer to an etchant to divide the first pattern into a second pattern including at least two separate elements.