The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Aug. 07, 2008
Applicants:
Hirokazu Ueda, Amagasaki, JP;
Toshihisa Nozawa, Amagasaki, JP;
Takaaki Matsuoka, Tokyo, JP;
Akinobu Teramoto, Sendai, JP;
Tadahiro Ohmi, Sendai, JP;
Inventors:
Hirokazu Ueda, Amagasaki, JP;
Toshihisa Nozawa, Amagasaki, JP;
Takaaki Matsuoka, Tokyo, JP;
Akinobu Teramoto, Sendai, JP;
Tadahiro Ohmi, Sendai, JP;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×10cmnear a surface of the semiconductor substrate.