The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Dec. 14, 2009
Tetsuya Ishikawa, Saratoga, CA (US);
David H. Quach, San Jose, CA (US);
Anzhong Chang, San Jose, CA (US);
Olga Kryliouk, Sunnyvale, CA (US);
Yuriy Melnik, Santa Clara, CA (US);
Harsukhdeep S. Ratia, Santa Clara, CA (US);
Son T. Nguyen, San Jose, CA (US);
Lily Pang, Fremont, CA (US);
Tetsuya Ishikawa, Saratoga, CA (US);
David H. Quach, San Jose, CA (US);
Anzhong Chang, San Jose, CA (US);
Olga Kryliouk, Sunnyvale, CA (US);
Yuriy Melnik, Santa Clara, CA (US);
Harsukhdeep S. Ratia, Santa Clara, CA (US);
Son T. Nguyen, San Jose, CA (US);
Lily Pang, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.