The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8486823 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 16, 2013

Filed:

Mar. 07, 2008
Applicants:

Wen-chih Chiou, Miaoli County, TW;

Chen-hua Yu, Hsinchu, TW;

Weng-jin Wu, Hsinchu, TW;

Jung-chih HU, Taoyuan County, TW;

Inventors:

Wen-Chih Chiou, Miaoli County, TW;

Chen-Hua Yu, Hsinchu, TW;

Weng-Jin Wu, Hsinchu, TW;

Jung-Chih Hu, Taoyuan County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A through via process is performed on a semiconductor substrate with a contact plug formed in an interlayer dielectric (ILD), and then a via plug is formed in the ILD layer to extend through a portion of the semiconductor substrate, followed forming an interconnection structure electrically connected with the contact plug and the via plug.


Find Patent Forward Citations

Chiou, Wen-Chih. (2013). Methods of forming through via (U.S. Patent No. 8486823). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8486823

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…