The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
May. 11, 2009
Hirokazu Ueda, Sendai, JP;
Yoshinobu Tanaka, Albany, NY (US);
Yusuke Ohsawa, Amagasaki, JP;
Toshihisa Nozawa, Sendai, JP;
Takaaki Matsuoka, Tokyo, JP;
Hirokazu Ueda, Sendai, JP;
Yoshinobu Tanaka, Albany, NY (US);
Yusuke Ohsawa, Amagasaki, JP;
Toshihisa Nozawa, Sendai, JP;
Takaaki Matsuoka, Tokyo, JP;
Tokyo Electron Limited, , JP;
Abstract
A silicon compound gas, an oxidizing gas, and a rare gas are supplied into a chamber () of a plasma processing apparatus (). A microwave is supplied into the chamber (), and a silicon oxide film is formed on a target substrate with plasma generated by the microwave. A partial pressure ratio of the rare gas is 10% or more of a total gas pressure of the silicon compound gas, the oxidizing gas, and the rare gas, and an effective flow ratio of the silicon compound gas and the oxidizing gas (oxidizing gas/silicon compound gas) is not less than 3 but not more than 11.