The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Jan. 21, 2011
Takeshi Ohmori, Tachikawa, JP;
Yasuhiro Nishimori, Hikari, JP;
Hiroaki Ishimura, Kudamatsu, JP;
Hitoshi Kobayashi, Kudamatsu, JP;
Masamichi Sakaguchi, Kudamatsu, JP;
Takeshi Ohmori, Tachikawa, JP;
Yasuhiro Nishimori, Hikari, JP;
Hiroaki Ishimura, Kudamatsu, JP;
Hitoshi Kobayashi, Kudamatsu, JP;
Masamichi Sakaguchi, Kudamatsu, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.