The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Jun. 25, 2011
Akira Fujimura, Saratoga, CA (US);
Kazuyuki Hagiwara, Tokyo, JP;
Stephen F. Meier, Sunnyvale, CA (US);
Ingo Bork, Mountain View, CA (US);
Akira Fujimura, Saratoga, CA (US);
Kazuyuki Hagiwara, Tokyo, JP;
Stephen F. Meier, Sunnyvale, CA (US);
Ingo Bork, Mountain View, CA (US);
D2S, Inc., San Jose, CA (US);
Abstract
A method and system for fracturing or mask data preparation for charged particle beam lithography are disclosed in which accuracy and/or edge slope of a pattern formed on a surface by a set of charged particle beam shots is enhanced by use of partially-overlapping shots. In some embodiments, dosages of the shots may vary with respect to each other before proximity effect correction. Particle beam simulation may be used to calculate the pattern and the edge slope. Enhanced edge slope can improve critical dimension (CD) variation and line-edge roughness (LER) of the pattern produced on the surface.