The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Jun. 08, 2012
Hung-chun Wang, Taichung, TW;
Tzu-chin Lin, Hsinchu, TW;
Chia-chi Lin, Hsinchu, TW;
Nian-fuh Cheng, Hsinchu, TW;
Jeng-horng Chen, Hsin-Chu, TW;
Wen-chun Huang, Tainan, TW;
Ru-gun Liu, Zhubei, TW;
Hung-Chun Wang, Taichung, TW;
Tzu-Chin Lin, Hsinchu, TW;
Chia-Chi Lin, Hsinchu, TW;
Nian-Fuh Cheng, Hsinchu, TW;
Jeng-Horng Chen, Hsin-Chu, TW;
Wen-Chun Huang, Tainan, TW;
Ru-Gun Liu, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure describes a method of forming a pattern by an electron beam lithography system. The method includes receiving an integrated circuit (IC) design layout data having a polygon and a forbidden pattern, modifying the polygon and the forbidden pattern using an electron proximity correction (EPC) technique, stripping the modified polygon into subfields, converting the stripped polygon to an electron beam writer format data, and writing the electron beam writer formatted polygon onto a substrate by an electron beam writer. Stripping the modified polygon includes finding the modified forbidden pattern as a reference layer, and stitching the modified polygon to avoid stitching the modified forbidden pattern.