The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Oct. 06, 2011
Timothy W. Weidman, Sunnyvale, CA (US);
Timothy Michaelson, Milpitas, CA (US);
Paul Deaton, San Jose, CA (US);
Nitin K. Ingle, Santa Clara, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Amit Chatterjee, Cupertino, CA (US);
Timothy W. Weidman, Sunnyvale, CA (US);
Timothy Michaelson, Milpitas, CA (US);
Paul Deaton, San Jose, CA (US);
Nitin K. Ingle, Santa Clara, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Amit Chatterjee, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.