The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Apr. 01, 2011
Hui Jae Yoo, Hillsboro, OR (US);
Jeffery D. Bielefeld, Forest Grove, OR (US);
Sean W. King, Beaverton, OR (US);
Sridhar Balakrishnan, Rio Rancho, NM (US);
Hui Jae Yoo, Hillsboro, OR (US);
Jeffery D. Bielefeld, Forest Grove, OR (US);
Sean W. King, Beaverton, OR (US);
Sridhar Balakrishnan, Rio Rancho, NM (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Processes of forming an insulated wire into an interlayer dielectric layer (ILD) of a back-end metallization includes thermally treating a metallic barrier precursor under conditions to cause at least one alloying element in the barrier precursor to form a dielectric barrier between the wire and the ILD. The dielectric barrier is therefore a self-forming, self-aligned barrier. Thermal processing is done under conditions to cause the at least one alloying element to migrate from a zone of higher concentration thereof to a zone of lower concentration thereof to further form the dielectric barrier. Various apparatus are made by the process.