The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Feb. 18, 2010
Shu-hui Su, Tucheng, TW;
Cheng-lin Huang, Hsinchu, TW;
Jiing-feng Yang, Zhubei, TW;
Zhen-cheng Wu, Hsinchu, TW;
Ren-guei Wu, Taoyuan, TW;
Dian-hau Chen, Hsinchu, TW;
Yuh-jier Mii, Hsinchu, TW;
Shu-Hui Su, Tucheng, TW;
Cheng-Lin Huang, Hsinchu, TW;
Jiing-Feng Yang, Zhubei, TW;
Zhen-Cheng Wu, Hsinchu, TW;
Ren-Guei Wu, Taoyuan, TW;
Dian-Hau Chen, Hsinchu, TW;
Yuh-Jier Mii, Hsinchu, TW;
Abstract
A semiconductor structure includes a first metal-containing layer, a dielectric capping layer, a second metal-containing layer, and a conductive pad. The first metal-containing layer includes a set of metal structures, a dielectric filler disposed to occupy a portion of the first metal-containing layer, and an air-gap region defined by at least the set of metal structures and the dielectric filler and abutting at least a portion of the set of metal structures. The second metal-containing layer includes at least a via plug electrically connected to a portion of the set of metal structures. The conductive pad and the via plug do not overlap the air-gap region.