The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2013

Filed:

Apr. 30, 2010
Applicants:

Benjamin M. Rathsack, Austin, TX (US);

Steven Scheer, Austin, TX (US);

Mark H. Somervell, Austin, TX (US);

Inventors:

Benjamin M. Rathsack, Austin, TX (US);

Steven Scheer, Austin, TX (US);

Mark H. Somervell, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/09 (2006.01); G03F 7/11 (2006.01);
U.S. Cl.
CPC ...
G03F 7/09 (2013.01); G03F 7/092 (2013.01);
Abstract

A method for patterning a substrate with extreme ultraviolet (EUV) radiation is provided. The method includes contacting a surface of the substrate with at least one surface modification agent that reacts with and bonds to the surfaceof the substrateto provide a modified surface. A layer of photoresist is formed on the modified surface, followed by exposing the layer of photoresist to a pattern of EUV radiation. The surface modification agent has a general formula: X-L-Z, where X is a leaving group; L is a linkage group including a substituted or un-substituted carbon chain having 1 to 20 carbons, a sulfur moiety, a silicon moiety, or combinations thereof; and Z is at least one of an acid functional group, a photoactive acid generator group or a halide.


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