Austin, TX, United States of America

Benjamin M Rathsack


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2012-2013

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3 patents (USPTO):

Title: Innovations by Benjamin M Rathsack: Pioneering Patents in Substrate Treatment

Introduction: Benjamin M Rathsack is a prominent inventor based in Austin, TX, known for his significant contributions to the field of substrate treatment and lithographic applications. With a total of three patents to his name, he has demonstrated a strong commitment to advancing technology in semiconductor manufacturing.

Latest Patents: Rathsack's latest patents include groundbreaking methodologies that enhance patterning techniques. The first, titled "Substrate treatment to reduce pattern roughness," introduces a method for patterning a substrate using extreme ultraviolet (EUV) radiation. This innovative technique involves treating the substrate's surface with a surface modification agent that bonds with it, creating a modified surface suitable for photoresist application. The formulation of the surface modification agent includes specific components designed to optimize the patterning process.

His second patent, "Method of slimming radiation-sensitive material lines in lithographic applications," outlines a system for efficiently patterning substrates using radiation-sensitive materials. This patent covers the process of exposing layers of radiation-sensitive material on a substrate, followed by a post-exposure bake to achieve the desired material lines, ultimately enhancing precision in lithographic techniques.

Career Highlights: Benjamin Rathsack is currently associated with Tokyo Electron Limited, a renowned company in the semiconductor industry. His work within the organization emphasizes his expertise in the development of innovative fabrication techniques that cater to modern requirements in chip manufacturing.

Collaborations: Throughout his career, Rathsack has collaborated with notable colleagues, including Mark H Somervell and Michael Carcasi. These partnerships have contributed to the fruitful exchange of ideas and have fostered advancements in their respective fields.

Conclusion: Benjamin M Rathsack's contributions to substrate treatment and lithographic technologies underscore his role as a leading inventor. With his innovative patents and collaborative endeavors, he continues to play a vital part in shaping the future of semiconductor manufacturing, demonstrating that his work is essential for advancing technological capabilities in the industry.

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