The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Apr. 02, 2009
Hsien-cheng Wang, Hsinchu, TW;
Hung Chang Hsieh, Hsin-Chu, TW;
Shih-che Wang, Hsin-Chu, TW;
Ping Chieh Wu, Shulin, TW;
Wen-chun Huang, Xi-Gang Xiang, TW;
Ming-chang Wen, Kaohsiung, TW;
Hsien-Cheng Wang, Hsinchu, TW;
Hung Chang Hsieh, Hsin-Chu, TW;
Shih-Che Wang, Hsin-Chu, TW;
Ping Chieh Wu, Shulin, TW;
Wen-Chun Huang, Xi-Gang Xiang, TW;
Ming-Chang Wen, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Provided is a lithography system operation to include a first aperture or a second aperture. Each of the first and second apertures has two pairs of radiation-transmitting regions where one pair of radiation-transmitting regions are larger than a second pair. For an aperture, each pair of radiation-transmitting regions are on different diametrical axis. In an embodiment, one aperture is used for x-dipole illumination and the second aperture is used for y-dipole illumination.