The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Mar. 19, 2007
Adrien R. Lavoie, Beaverton, OR (US);
Aaron A. Budrevich, Portland, OR (US);
Ashutosh Ashutosh, Hillsboro, OR (US);
Huicheng Chang, Beaverton, OR (US);
Adrien R. Lavoie, Beaverton, OR (US);
Aaron A. Budrevich, Portland, OR (US);
Ashutosh Ashutosh, Hillsboro, OR (US);
Huicheng Chang, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method for improving the reliability of a high-k gate dielectric layer comprises incorporating a noble metal into a transistor gate stack that contains the high-k gate dielectric layer and annealing the transistor gate stack in a molecular hydrogen or deuterium containing atmosphere. The annealing process drives at least a portion of the molecular hydrogen or deuterium toward the high-k gate dielectric layer. When the molecular hydrogen or deuterium contacts the noble metal, it is converted into atomic hydrogen or deuterium that is able to treat the high-k gate dielectric layer and improve its reliability.