Huicheng Chang

Title: Huicheng Chang: Innovator in High-K Gate Dielectric Technology

Introduction

Huicheng Chang is a notable inventor based in Beaverton, Oregon. He has made significant contributions to the field of semiconductor technology, particularly in the area of high-K gate dielectrics. With a total of two patents to his name, Chang's work is recognized for its innovative approaches to improving device reliability.

Latest Patents

Chang's latest patents focus on enhancing the reliability of high-K gate dielectric layers. One of his patents describes a method that incorporates a noble metal into a transistor gate stack containing the high-K gate dielectric layer. This method involves annealing the transistor gate stack in a molecular hydrogen or deuterium atmosphere. The process drives molecular hydrogen or deuterium toward the high-K gate dielectric layer, where it is converted into atomic hydrogen or deuterium. This conversion allows for effective treatment of the high-K gate dielectric layer, ultimately improving its reliability. Another patent addresses boundaries with elevated deuterium levels, where a device is annealed in a deuterium atmosphere, allowing deuterium to penetrate and passivate the boundary.

Career Highlights

Huicheng Chang is currently employed at Intel Corporation, a leading company in semiconductor manufacturing. His work at Intel has positioned him as a key player in advancing technologies that enhance the performance and reliability of electronic devices.

Collaborations

Chang collaborates with talented colleagues, including Adrien Lavoie and Aaron A Budrevich. Their combined expertise contributes to the innovative projects at Intel Corporation.

Conclusion

Huicheng Chang's contributions to high-K gate dielectric technology demonstrate his commitment to advancing semiconductor reliability. His innovative patents and work at Intel Corporation highlight his role as a significant inventor in the field.