The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Jan. 31, 2008
Eiichi Nishimura, Nirasaki, JP;
Chie Kato, Nirasaki, JP;
Akitaka Shimizu, Nirasaki, JP;
Hiroyuki Takahashi, Beverly, MA (US);
Eiichi Nishimura, Nirasaki, JP;
Chie Kato, Nirasaki, JP;
Akitaka Shimizu, Nirasaki, JP;
Hiroyuki Takahashi, Beverly, MA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A substrate processing method that can selectively remove deposit produced through dry etching of silicon. A substrate has a silicon base material and a hard mask that is made of a silicon nitride film and/or a silicon oxide film and formed on the silicon base material, the hard mask having an opening to which at least part of the silicon base material is exposed. A trench corresponding to the opening is formed in the silicon base material through dry etching using plasma produced from halogenated gas. After the dry etching, the substrate is heated to a temperature of not less than 200° C., and then hydrogen fluoride gas and helium gas are supplied toward the substrate.