The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Oct. 14, 2010
Ming-hsi Yeh, Hsinchu, TW;
Hsien-hsin Lin, Hsinchu, TW;
Hui Ouyang, Chubei, TW;
Chi-ming Yang, Hsian-San District, TW;
Ming-Hsi Yeh, Hsinchu, TW;
Hsien-Hsin Lin, Hsinchu, TW;
Hui Ouyang, Chubei, TW;
Chi-Ming Yang, Hsian-San District, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for fabricating an integrated device is disclosed. The disclosed method provides improved formation selectivity of epitaxial films over a pre-determined region designed for forming an epi film and a protective layer preferred not to form an epi, polycrystalline, or amorphous film thereon during an epi film formation process. In an embodiment, the improved formation selectivity is achieved by providing a nitrogen-rich protective layer to decrease the amount of growth epi, polycrystalline, or amorphous film thereon.