The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Dec. 11, 2007
Jianhui YE, Bristow, VA (US);
Huang Liu, Singapore, SG;
Alex K H See, Singapore, SG;
Wei LU, Singapore, SG;
Chun Hui Low, Singapore, SG;
Chim Seng Seet, Singapore, SG;
Mei Sheng Zhou, Singapore, SG;
Liang Choo Hsia, Singapore, SG;
Jianhui Ye, Bristow, VA (US);
Huang Liu, Singapore, SG;
Alex K H See, Singapore, SG;
Wei Lu, Singapore, SG;
Chun Hui Low, Singapore, SG;
Chim Seng Seet, Singapore, SG;
Mei Sheng Zhou, Singapore, SG;
Liang Choo Hsia, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
A composite etch stop layer which comprises primary and secondary stop layers is used to form contacts in a dielectric layer to contact regions in a substrate. The secondary etch stop layer includes a high-k dielectric material to achieve high etch selectivity with the dielectric layer during contact formation. The secondary stop layer is removed to expose the contact regions. Removal of the secondary stop layer is achieved with high selectivity to the materials therebelow.