The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2012

Filed:

Feb. 11, 2010
Applicants:

Yaojian Lin, Singapore, SG;

Haijing Cao, Singapore, SG;

Qing Zhang, Singapore, SG;

Kang Chen, Singapore, SG;

Jianmin Fang, Singapore, SG;

Inventors:

Yaojian Lin, Singapore, SG;

Haijing Cao, Singapore, SG;

Qing Zhang, Singapore, SG;

Kang Chen, Singapore, SG;

Jianmin Fang, Singapore, SG;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor wafer contains a substrate having a plurality of active devices formed thereon. An analog circuit is formed on the substrate. The analog circuit can be an inductor, metal-insulator-metal capacitor, or resistor. The inductor is made with copper. A through substrate via (TSV) is formed in the substrate. A conductive material is deposited in the TSV in electrical contact with the analog circuit. An under bump metallization layer is formed on a backside of the substrate in electrical contact with the TSV. A solder material is deposited on the UBM layer. The solder material is reflowed to form a solder bump. A wire bond is formed on a top surface of the substrate. A redistribution layer is formed between the TSV and UBM. The analog circuit electrically connects through the TSV to the solder bump on the back side of the substrate.


Find Patent Forward Citations

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Lin, Yaojian. (2012). Semiconductor device and method for forming passive circuit elements with through silicon vias to backside interconnect structures (U.S. Patent No. 8310058). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8310058

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