The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
May. 28, 2010
Cheng-lin Huang, Hsinchu, TW;
Jiing-feng Yang, Zhubei, TW;
Chii-ping Chen, Taichung, TW;
Dian-hau Chen, Hsinchu, TW;
Yuh-jier Mii, Hsin-Chu, TW;
Cheng-Lin Huang, Hsinchu, TW;
Jiing-Feng Yang, Zhubei, TW;
Chii-Ping Chen, Taichung, TW;
Dian-Hau Chen, Hsinchu, TW;
Yuh-Jier Mii, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Partial air gap formation for providing interconnect isolation in integrated circuits is described. One embodiment is an integrated circuit ('IC') structure includes a substrate having two adjacent interconnect features formed thereon; caps formed over and aligned with each of the interconnect features; sidewalls formed on opposing sides of each of the interconnect features and a gap formed between the interconnect features; and a dielectric material layer disposed over the substrate to cover the caps and the gap.