The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Jul. 14, 2010
Chun-wen Nieh, Hsinchu, TW;
Hung-chang Hsu, Kaohsiung, TW;
Wen-chi Tsai, Hsinchu, TW;
Mei-yun Wang, Chu-Pei, TW;
Chii-ming Wu, Taipei, TW;
Wei-jung Lin, Taipei, TW;
Chih-wei Chang, Hsinchu, TW;
Chun-Wen Nieh, Hsinchu, TW;
Hung-Chang Hsu, Kaohsiung, TW;
Wen-Chi Tsai, Hsinchu, TW;
Mei-Yun Wang, Chu-Pei, TW;
Chii-Ming Wu, Taipei, TW;
Wei-Jung Lin, Taipei, TW;
Chih-Wei Chang, Hsinchu, TW;
Abstract
Methods for fabricating a semiconductor device are disclosed. A metal-rich silicide and/or a mono-silicide is formed on source/drain (S/D) regions. A millisecond anneal is provided to the metal-rich silicide and/or the mono-silicide to form a di-silicide with limited spikes at the interface between the silicide and substrate. The di-silicide has an additive which can lower the electron Schottky barrier height.