The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Nov. 15, 2009
Tzung-i Su, Yun-Lin County, TW;
Chao-an Su, Kaohsiung County, TW;
Ming-i Wang, Taipei County, TW;
Bang-chiang Lan, Taipei, TW;
Tzung-han Tan, Taipei, TW;
Hui-min Wu, Hsinchu County, TW;
Chien-hsin Huang, Taichung, TW;
Min Chen, Taipei County, TW;
Meng-jia Lin, Changhua County, TW;
Tzung-I Su, Yun-Lin County, TW;
Chao-An Su, Kaohsiung County, TW;
Ming-I Wang, Taipei County, TW;
Bang-Chiang Lan, Taipei, TW;
Tzung-Han Tan, Taipei, TW;
Hui-Min Wu, Hsinchu County, TW;
Chien-Hsin Huang, Taichung, TW;
Min Chen, Taipei County, TW;
Meng-Jia Lin, Changhua County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of fabricating a semiconductor optoelectronic structure is provided. First, a substrate is provided, and a waveguide is formed therein, and then a plurality of dielectric layers is formed on the waveguide. Next, a contact pad and a passivation layer are provided on the dielectric layers and a patterned mask layer is formed thereon. Last, an etching process is provided by using the patterned mask layer to expose the contact pad and remove a portion of the passivation layer and the dielectric layers to form a transformer.