The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Jan. 07, 2009
Qinghua Zhong, Fremont, CA (US);
Sung Cho, Fremont, CA (US);
Gowri Kamarthy, Pleasanton, CA (US);
Linda Braly, Oakland, CA (US);
Qinghua Zhong, Fremont, CA (US);
Sung Cho, Fremont, CA (US);
Gowri Kamarthy, Pleasanton, CA (US);
Linda Braly, Oakland, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method of forming spacers from a non-silicon oxide, silicon containing spacer layer with horizontal surfaces and sidewall surfaces over a substrate is provided. A plasma oxidation treatment is provided to form a silicon oxide coating over the spacer layer, wherein the silicon oxide coating provides a horizontal coating on the horizontal surfaces and sidewall coatings on the sidewall surfaces of the spacer layer. An anisotropic main etch that selectively etches horizontal surfaces of the spacer layer and silicon oxide coating with respect to sidewall surfaces of the spacer layer and the sidewall coatings of the silicon oxide coating is provided. The spacer layer is etched, wherein the sidewall coatings of the silicon oxide coating protect sidewall surfaces of the spacer layer.