The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Jan. 21, 2009
Chun-chieh Chuang, Tainan, TW;
Dun-nian Yaung, Taipei, TW;
Jen-cheng Liu, Hsin-Chu, TW;
Wen-de Wang, Minsyong Township, Chiayi County, TW;
Jyh-ming Hung, Dacun Township, Changhua County, TW;
Pao-tung Chen, Tainan Hsien, TW;
Chun-Chieh Chuang, Tainan, TW;
Dun-Nian Yaung, Taipei, TW;
Jen-Cheng Liu, Hsin-Chu, TW;
Wen-De Wang, Minsyong Township, Chiayi County, TW;
Jyh-Ming Hung, Dacun Township, Changhua County, TW;
Pao-Tung Chen, Tainan Hsien, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for fabricating a semiconductor device with improved bonding ability is disclosed. The method comprises providing a substrate having a front surface and a back surface; forming one or more sensor elements on the front surface of the substrate; forming one or more metallization layers over the front surface of the substrate, wherein forming a first metallization layer comprises forming a first conductive layer over the front surface of the substrate; removing the first conductive layer from a first region of the substrate; forming a second conductive layer over the front surface of the substrate; and removing portions of the second conductive layer from the first region and a second region of the substrate, wherein the first metallization layer in the first region comprises the second conductive layer and the first metallization layer in the second region comprises the first conductive layer and the second conductive layer.