The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Sep. 26, 2011
Toshiyuki Hirota, Chuo-ku, JP;
Takakazu Kiyomura, Chuo-ku, JP;
Yuichiro Morozumi, Nirasaki, JP;
Shingo Hishiya, Nirasaki, JP;
Toshiyuki Hirota, Chuo-ku, JP;
Takakazu Kiyomura, Chuo-ku, JP;
Yuichiro Morozumi, Nirasaki, JP;
Shingo Hishiya, Nirasaki, JP;
Elpida Memory, Inc., Tokyo, JP;
Tokyo Electron Limited, , JP;
Abstract
To provide a dielectric film having good crystallinity while suppressing an influence of the size effects and preventing the dielectric film from being divided by an Al-doped layer although there is provided the Al-doped layer for improving the leakage characteristics in the dielectric film of a capacitor, the dielectric film has at least one Al-doped layer, and an area density of Al atoms in one layer of the Al-doped layer is smaller than 1.4E+14 atoms/cm. Further, to achieve the area density, there is employed a combination of formation of a dielectric film using a general ALD method and Al doping using an adsorption site blocking ALD method including adsorbing a blocker molecule restricting an adsorption site of an Al source, adsorbing the Al source, and introducing a reaction gas for reaction.