The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Jul. 21, 2010
Yu-lien Huang, Jhubei, TW;
Mao-rong Yeh, Tao Yuan, TW;
Chun Hsiung Tsai, Xinpu Township, Hsinchu County, TW;
Tsung-hung Lee, Hsinchu, TW;
Da-wen Lin, Hsinchu, TW;
Tsz-mei Kwok, Hsinchu, TW;
Yu-Lien Huang, Jhubei, TW;
Mao-Rong Yeh, Tao Yuan, TW;
Chun Hsiung Tsai, Xinpu Township, Hsinchu County, TW;
Tsung-Hung Lee, Hsinchu, TW;
Da-Wen Lin, Hsinchu, TW;
Tsz-Mei Kwok, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a high surface dopant concentration semiconductor device and method of fabricating. In an embodiment, a method of forming the semiconductor device includes providing a substrate, forming a doped region in the substrate, forming a stressing layer over the doped region, performing a boron (B) doping implant to the stressing layer, annealing the B doping implant, and after annealing the B doping implant, forming a silicide layer over the stressing layer.