The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Dec. 21, 2006
Seokmin Yun, Pleasanton, CA (US);
Seong Hwan Cho, Fremont, CA (US);
Shrikant Lohokare, Fremont, CA (US);
Mark Wilcoxson, Oakland, CA (US);
John M. DE Larios, Palo Alto, CA (US);
Stephan Hoffmann, Fremont, CA (US);
Seokmin Yun, Pleasanton, CA (US);
Seong Hwan Cho, Fremont, CA (US);
Shrikant Lohokare, Fremont, CA (US);
Mark Wilcoxson, Oakland, CA (US);
John M. De Larios, Palo Alto, CA (US);
Stephan Hoffmann, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
An apparatus, system and method for removing a damaged material from a low-k dielectric film layer include identifying a control chemistry, the control chemistry configured to selectively remove the damaged material from the low-k dielectric film layer, the damaged material being in a region where a feature was formed through the low-k dielectric film layer; establishing a plurality of process parameters characterizing aspects of the damaged material to be removed and applying the control chemistry to the low-k dielectric film layer, the application of the control chemistry being defined based on the established process parameters of the damaged material, such that the damaged material is substantially removed from the areas around the feature and the areas around the feature are substantially defined by low-k characteristics of the low-k dielectric film layer.