The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Aug. 06, 2008
Takashi Kaito, Chiba, JP;
Yoshitomo Nakagawa, Chiba, JP;
Junichi Tashiro, Chiba, JP;
Yasuhiko Sugiyama, Chiba, JP;
Toshiaki Fujii, Chiba, JP;
Kazuo Aita, Chiba, JP;
Takashi Ogawa, Chiba, JP;
Takashi Kaito, Chiba, JP;
Yoshitomo Nakagawa, Chiba, JP;
Junichi Tashiro, Chiba, JP;
Yasuhiko Sugiyama, Chiba, JP;
Toshiaki Fujii, Chiba, JP;
Kazuo Aita, Chiba, JP;
Takashi Ogawa, Chiba, JP;
SII NanoTechnology Inc., , JP;
Abstract
A composite focused ion beam device has a first ion beam irradiation system that irradiates a first ion beam for processing a sample and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a plasma type gas ion source that generates first ions for forming the first ion beam, each of the first ions having a first mass. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. Each of the second ions has a second mass smaller than that of the first mass.