The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Feb. 24, 2010
Sangheon Lee, Dublin, CA (US);
Dae-han Choi, Sunnyvale, CA (US);
Jisoo Kim, Pleasanton, CA (US);
Peter Cirigliano, Sunnyvale, CA (US);
Zhisong Huang, Fremont, CA (US);
Robert Charatan, Portland, OR (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Sangheon Lee, Dublin, CA (US);
Dae-Han Choi, Sunnyvale, CA (US);
Jisoo Kim, Pleasanton, CA (US);
Peter Cirigliano, Sunnyvale, CA (US);
Zhisong Huang, Fremont, CA (US);
Robert Charatan, Portland, OR (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.