The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Mar. 26, 2007
Ryukichi Shimizu, Nirasaki, JP;
Akihiro Kikuchi, Nirasaki, JP;
Toshihiko Shindo, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Disclosed is a semiconductor device fabricating method. A substrate is provided thereon with: an inorganic insulating film; a first inorganic sacrifice film stacked on the inorganic insulating film and having components different from those of the inorganic insulating film; a second sacrifice film formed of an inorganic insulative film stacked on the first sacrifice film, wherein a pattern for forming grooves for wiring embedment is formed in the second sacrifice film; and an organic layer including a photoresist film, wherein a pattern for forming holes for wiring embedment is formed in the organic film. According to the present invention, the thickness of the organic layer is set to be greater than the sum of the thicknesses of etch target films, i.e., the insulating film, the first sacrifice film and the second sacrifice film; the etch target films are etched in a selectivity-less manner by using plasma generated from a mixed gas of CFgas and CHFgas.